onsemi MJE5852G

onsemi · Transistors (BJTs) · MPN MJE5852G

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Specifications

Current - Collector Cutoff2.5mA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO6V
DC Current Gain5
Pd - Power Dissipation80W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))5V

Technical details

400V 5 1 PNP PNP 8A TO-220 Single Bipolar Transistors RoHS

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