onsemi MJE5742G

onsemi · Transistors (BJTs) · MPN MJE5742G

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Specifications

Vbe Saturation(VBE(sat))3.5V
Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO8V
DC Current Gain200
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))3V

Technical details

400V 200 NPN 8A TO-220 Single Bipolar Transistors RoHS

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