onsemi · Transistors (BJTs) · MPN MJE5742G
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| Vbe Saturation(VBE(sat)) | 3.5V |
|---|---|
| Current - Collector Cutoff | - |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 400V |
| Emitter-Base Voltage VEBO | 8V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 2W |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 3V |
400V 200 NPN 8A TO-220 Single Bipolar Transistors RoHS