onsemi MJE5731AG

onsemi · Transistors (BJTs) · MPN MJE5731AG

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO375V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation40W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 375V 1A 10MHz 40W Through Hole TO-220

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