onsemi MJE5730G

onsemi · Transistors (BJTs) · MPN MJE5730G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain30
Pd - Power Dissipation40W
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

300V 30 PNP 1A TO-220 Single Bipolar Transistors RoHS

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