onsemi MJE243G

onsemi · Transistors (BJTs) · MPN MJE243G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain40
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 100V 4A 40MHz 15W Through Hole TO-225-3

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