onsemi MJE200G

onsemi · Transistors (BJTs) · MPN MJE200G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)65MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO8V
DC Current Gain45
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.8V

Technical details

40V 45 1 NPN NPN 5A TO-225-3 Single Bipolar Transistors RoHS

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