onsemi · Transistors (BJTs) · MPN MJE182G
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| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | 50MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 50 |
| Pd - Power Dissipation | 12.5W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.7V |
Bipolar (BJT) Transistor NPN 100V 3A 50MHz 12.5W Through Hole TO-225-3