onsemi MJE172G

onsemi · Transistors (BJTs) · MPN MJE172G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO7V
DC Current Gain50
Pd - Power Dissipation12.5W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.7V

Technical details

Bipolar (BJT) Transistor PNP 80V 3A 50MHz 12.5W Through Hole TO-225-3

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