onsemi MJE15031G

onsemi · Transistors (BJTs) · MPN MJE15031G

No reviews yet — be the first to review onsemi MJE15031G.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation50W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 150V 8A 30MHz 50W Through Hole TO-220

Related Transistors (BJTs)