onsemi MJE15028G

onsemi · Transistors (BJTs) · MPN MJE15028G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation50W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 120V 8A 30MHz 50W Through Hole TO-220

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