onsemi MJD47TF

onsemi · Transistors (BJTs) · MPN MJD47TF

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Specifications

Current - Collector Cutoff200uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))1V

Technical details

250V 30 1 NPN NPN 1A TO-252(DPAK) Single Bipolar Transistors RoHS

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