onsemi MJD44H11TM

onsemi · Transistors (BJTs) · MPN MJD44H11TM

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
DC Current Gain60
Pd - Power Dissipation1.75W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

80V 60 NPN 8A TO-252-3(DPAK) Single Bipolar Transistors RoHS

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