onsemi · Transistors (BJTs) · MPN MJD44H11-1G
No reviews yet — be the first to review onsemi MJD44H11-1G.
| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 85MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 20W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN 80V 8A 85MHz 20W Through Hole TO-251(IPAK)