onsemi MJD44E3T4G

onsemi · Transistors (BJTs) · MPN MJD44E3T4G

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO80V
DC Current Gain1000
Pd - Power Dissipation1.75W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))2V
Operating Temperature-55℃~+150℃@(Tj)

Technical details

80V 1000 NPN 10A DPAK Single Bipolar Transistors RoHS

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