onsemi MJD340T4G

onsemi · Transistors (BJTs) · MPN MJD340T4G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO3V
DC Current Gain240
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 300V 0.5A 10MHz 15W Surface Mount TO-252-2(DPAK)

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