onsemi · Transistors (BJTs) · MPN MJD32T4G
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| Current - Collector Cutoff | 50uA |
|---|---|
| Transition frequency(fT) | 3MHz |
| Collector - Emitter Voltage VCEO | 40V |
| DC Current Gain | 10 |
| Pd - Power Dissipation | 1.56W |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 1.2V |
| Operating Temperature | -65℃~+150℃ |
40V 10 PNP 3A DPAK Single Bipolar Transistors RoHS