onsemi MJD3055RLG

onsemi · Transistors (BJTs) · MPN MJD3055RLG

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain20
Pd - Power Dissipation1.75W
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))8V

Technical details

60V 20 NPN 10A DPAK Single Bipolar Transistors RoHS

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