onsemi · Transistors (BJTs) · MPN MJD200T4G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 65MHz |
| Collector - Emitter Voltage VCEO | 25V |
| Emitter-Base Voltage VEBO | 8V |
| DC Current Gain | 76 |
| Pd - Power Dissipation | 12.5W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 300mV |
25V 76 1 NPN NPN 5A TO-252-2(DPAK) Single Bipolar Transistors RoHS