onsemi MJD200RLG

onsemi · Transistors (BJTs) · MPN MJD200RLG

No reviews yet — be the first to review onsemi MJD200RLG.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)65MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain45
Pd - Power Dissipation1.4W
typeNPN
Current - Collector(Ic)5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.8V

Technical details

25V 45 NPN 5A DPAK Single Bipolar Transistors RoHS

Related Transistors (BJTs)