onsemi · Transistors (BJTs) · MPN MJD122G
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 4MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 20W |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 4V |
100V 1000 NPN 8A TO-252(DPAK) Single Bipolar Transistors RoHS