onsemi · Transistors (BJTs) · MPN MJD117T4G
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| Current - Collector Cutoff | 20uA |
|---|---|
| Transition frequency(fT) | 25MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 1.75W |
| type | PNP |
| Current - Collector(Ic) | - |
| Vce Saturation(VCE(sat)) | 3V |
| Operating Temperature | -65℃~+150℃@(Tj) |
100V 1000 PNP TO-252(DPAK) Single Bipolar Transistors RoHS