onsemi MJB5742T4G

onsemi · Transistors (BJTs) · MPN MJB5742T4G

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
DC Current Gain200
Pd - Power Dissipation100W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))3V

Technical details

400V 200 NPN 8A D2PAK Single Bipolar Transistors RoHS

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