onsemi MJ4502G

onsemi · Transistors (BJTs) · MPN MJ4502G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO4V
DC Current Gain25
Pd - Power Dissipation200W
Number1 PNP
typePNP
Current - Collector(Ic)30A
Operating Temperature-65℃~+200℃
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor PNP 100V 30A 200W Through Hole TO-204

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