onsemi MJ14002G

onsemi · Transistors (BJTs) · MPN MJ14002G

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Specifications

Current - Collector Cutoff1mA
Collector - Emitter Voltage VCEO80V
DC Current Gain15
Pd - Power Dissipation300W
typeNPN
Current - Collector(Ic)60A
Vce Saturation(VCE(sat))-
Operating Temperature-65℃~+200℃

Technical details

80V 15 NPN 60A TO-3 Single Bipolar Transistors RoHS

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