onsemi · Transistors (BJTs) · MPN MJ11033G
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| Vbe Saturation(VBE(sat)) | 4.5V |
|---|---|
| Current - Collector Cutoff | - |
| Collector - Emitter Voltage VCEO | 120V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 300W |
| type | PNP |
| Current - Collector(Ic) | 50A |
| Operating Temperature | -55℃~+200℃@(Tj) |
| Vce Saturation(VCE(sat)) | 3.5V |
120V 1000 PNP 50A TO-204(TO-3) Single Bipolar Transistors RoHS