onsemi · Transistors (BJTs) · MPN MJ11032G
No reviews yet — be the first to review onsemi MJ11032G.
| Vbe Saturation(VBE(sat)) | 4.5V |
|---|---|
| Current - Collector Cutoff | - |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 120V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 300W |
| type | NPN |
| Current - Collector(Ic) | 50A |
| Operating Temperature | -55℃~+200℃@(Tj) |
| Vce Saturation(VCE(sat)) | 3.5V |
120V 1000 NPN 50A TO-204(TO-3) Single Bipolar Transistors RoHS