onsemi MJ11016G

onsemi · Transistors (BJTs) · MPN MJ11016G

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain1000
Pd - Power Dissipation200W
typeNPN
Current - Collector(Ic)30A
Operating Temperature-55℃~+200℃@(Tj)
Vce Saturation(VCE(sat))-

Technical details

120V 1000 NPN 30A TO-204(TO-3) Single Bipolar Transistors RoHS

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