onsemi MBT3946DW1T1G

onsemi · Transistors (BJTs) · MPN MBT3946DW1T1G

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation150mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))200mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 40V 200mA 300MHz 150mW SC-88

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