onsemi MBT35200MT1

onsemi · Transistors (BJTs) · MPN MBT35200MT1

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO35V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))310mV
Operating Temperature-

Technical details

35V 100 1 PNP PNP 2A TSOP-6 Single Bipolar Transistors

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