onsemi KST10MTF

onsemi · Transistors (BJTs) · MPN KST10MTF

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
Pd - Power Dissipation350mW
DC Current Gain60
Operating Temperature-
Current - Collector(Ic)4mA
Transition frequency(fT)650MHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 25V 4mA 650MHz 350mW Surface Mount SOT-23-3

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