onsemi KSP10BU

onsemi · Transistors (BJTs) · MPN KSP10BU

No reviews yet — be the first to review onsemi KSP10BU.

Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
DC Current Gain60
Pd - Power Dissipation350mW
Operating Temperature-
Current - Collector(Ic)-
Transition frequency(fT)650MHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number1 NPN

Technical details

25V 60 350mW NPN TO-92-3 Bipolar RF Transistors RoHS

Related Transistors (BJTs)