onsemi KSE13003H2ASTU

onsemi · Transistors (BJTs) · MPN KSE13003H2ASTU

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain9
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3

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