onsemi KSD882YS

onsemi · Transistors (BJTs) · MPN KSD882YS

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain160
Pd - Power Dissipation-
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

30V 160 NPN 3A TO-126-3 Single Bipolar Transistors RoHS

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