onsemi KSD5041RTA

onsemi · Transistors (BJTs) · MPN KSD5041RTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO7V
DC Current Gain180
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 20V 5A 150MHz 0.75W Through Hole TO-92-3L

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