onsemi · Transistors (BJTs) · MPN KSD2012GTU
No reviews yet — be the first to review onsemi KSD2012GTU.
| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | 3MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 400mV |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3