onsemi KSD1691YSTU

onsemi · Transistors (BJTs) · MPN KSD1691YSTU

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain60
Pd - Power Dissipation1.3W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole TO-126

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