onsemi KSD1616AYTA

onsemi · Transistors (BJTs) · MPN KSD1616AYTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain135
Pd - Power Dissipation750mW
typeNPN
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))150mV

Technical details

60V 135 NPN 1A TO-92-3 Single Bipolar Transistors RoHS

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