onsemi · Transistors (BJTs) · MPN KSD1616AGBU
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 160MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 135 |
| Pd - Power Dissipation | 750mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 150mV |
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 0.75W Through Hole TO-92-3