onsemi KSC5502DTM

onsemi · Transistors (BJTs) · MPN KSC5502DTM

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)11MHz
Collector - Emitter Voltage VCEO600V
Emitter-Base Voltage VEBO12V
DC Current Gain40
Pd - Power Dissipation87.83W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))3V

Technical details

Bipolar (BJT) Transistor NPN 600V 2A 11MHz 87.83W Surface Mount TO-252-2

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