onsemi KSC5026MOS

onsemi · Transistors (BJTs) · MPN KSC5026MOS

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)15MHz
Collector - Emitter Voltage VCEO800V
Emitter-Base Voltage VEBO7V
DC Current Gain10
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor NPN 800V 1.5A 15MHz 20W Through Hole TO-126

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