onsemi KSC2383OTA

onsemi · Transistors (BJTs) · MPN KSC2383OTA

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 160V 1A 100MHz 900mW Through Hole TO-92-3

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