onsemi KSA709GTA

onsemi · Transistors (BJTs) · MPN KSA709GTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO8V
DC Current Gain200
Pd - Power Dissipation800mW
typePNP
Current - Collector(Ic)700mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-

Technical details

150V 200 PNP 700mA TO-92-3 Single Bipolar Transistors RoHS

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