onsemi FJP5554TU

onsemi · Transistors (BJTs) · MPN FJP5554TU

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Specifications

Current - Collector Cutoff250uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
DC Current Gain20
Pd - Power Dissipation70W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-

Technical details

400V 20 NPN 4A TO-220-3 Single Bipolar Transistors RoHS

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