onsemi FJN3306RTA

onsemi · Transistors (BJTs) · MPN FJN3306RTA

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain68
Current - Collector(Ic)100mA
Input Resistor13kΩ
Number1 NPN (Pre-Biased)
Pd - Power Dissipation300mW

Technical details

50V 68 100mA 1 NPN (Pre-Biased) 300mW TO-92-3 Single, Pre-Biased Bipolar Transistors RoHS

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