onsemi FJN3301RTA

onsemi · Transistors (BJTs) · MPN FJN3301RTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
DC Current Gain20
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-

Technical details

50V 20 1 NPN NPN 100mA TO-92-3 Single Bipolar Transistors RoHS

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