onsemi FJB3307DTM

onsemi · Transistors (BJTs) · MPN FJB3307DTM

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
DC Current Gain5
Pd - Power Dissipation1.72W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))3V
Operating Temperature-

Technical details

400V 5 NPN 8A D2PAK Single Bipolar Transistors RoHS

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