onsemi FJB102TM

onsemi · Transistors (BJTs) · MPN FJB102TM

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Specifications

Current - Collector Cutoff50uA
Vbe On(VBE(on))2.8V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO10V
DC Current Gain1000
Pd - Power Dissipation80W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))2.5V
Operating Temperature-

Technical details

100V 1000 NPN 8A D2PAK Single Bipolar Transistors RoHS

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