onsemi FJA4313OTU

onsemi · Transistors (BJTs) · MPN FJA4313OTU

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain55
Pd - Power Dissipation130W
Number1 NPN
typeNPN
Current - Collector(Ic)17A
Vce Saturation(VCE(sat))400mV
Operating Temperature-50℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 250V 17A 30MHz 130W Through Hole TO-3P

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