onsemi FH105A-TR-E

onsemi · Transistors (BJTs) · MPN FH105A-TR-E

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Specifications

Emitter-Base Voltage(Vebo)1.5V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO10V
Pd - Power Dissipation300mW
Current - Collector(Ic)30mA
Transition frequency(fT)8GHz
typeNPN
Number2 NPN

Technical details

10V 300mW 30mA NPN MCP-6 Bipolar RF Transistors RoHS

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