onsemi · Transistors (BJTs) · MPN EMT1DXV6T1G
No reviews yet — be the first to review onsemi EMT1DXV6T1G.
| Current - Collector Cutoff | 500nA |
|---|---|
| DC Current Gain | 120 |
| Pd - Power Dissipation | 500mW |
| Collector - Emitter Voltage VCEO | 60V |
| Transition frequency(fT) | 140MHz |
| Vce Saturation(VCE(sat)) | 500mV |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
120 500mW 60V PNP 100mA SOT-563 Bipolar Transistor Arrays RoHS